Photo Sensor – Hanyoung Nux PB Series

Features

  • 25.4mm standard mounting hole
  • Hanyoung Nux new ASIC chip used (operation stability, long-distance detection)
  • Built-in VR for sensitivity adjustment
  • Convenient operation mode selection by VR
  • You can check the presence of overload with the output short circuit notification function
  • Excellent noise immunity and reduced disturbance of light influence
  • Strong protection circuit
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Photo Sensor
Model : PB Series

  • 25.4mm standard mounting hole
  • Hanyoung Nux new ASIC chip used (operation stability, long-distance detection)
  • Built-in VR for sensitivity adjustment
  • Convenient operation mode selection by VR
  • You can check the presence of overload with the output short circuit notification function
  • Excellent noise immunity and reduced disturbance of light influence
  • Strong protection circuit

Specification

Model NPN T7N T10RN T15RN M3RN R01N R04RN R1N D04N
PNP T7P T10RP T15RP M3RP R01P R04RP R1P D04P
Sensing mode Through-beam Retro-reflective
(mirror)		 Diffuse-reflective Distance settable
Sensing distance 7 m 10 m 15 m 0.1 – 3 m
(※Note 1)		 0.1 m 0.4 m 1 m 0.4 m
Hysteresis distance – 20% or less of detection distance
Detecting object Opaque Ø12 mm or more  Ø75 mm
more(Opaque)		 White non-glossy paper (100 x 100 mm)
Light source (wavelength) IR(850 ㎚) RED IR(850 nm) RED IR(850 nm) RED IR(850 nm) IR(850 nm)
Current consumption Emitter : 20 mA,
Receiver : Max. 20 mA		 Max. 30 mA
Power voltage 12 – 24 VDC ± 10 %  (Ripple max. 10 %)
Control output ▪NPN / PNP open collector output
▪Load Current: max. 100mA (26.4VDC standard)
▪Residual voltage – NPN: max. 1 V, PNP:max. 1 V
Operation mode Light ON / Dark ON switch
Protection
circuit		 Common
 Power reverse connection protection, Output reverse connection protection,
Output short-circuit over-current protection, Output short-circuit alarm(※Note 2)
Individual – Mutual interference prevation function
Response time 1 ms or less
Insulation resistance More than 20 MΩ (500 VDC mega)
Noise immunity Square wave noise by noise simulator (pulse width 1 µs) ±240 V
Dielectric strength 1,000 VAC (50/60 Hz for 1 minute)
Vibration resistance 10 – 55 Hz, double amplitude: 1.5 mm, X·Y·Z  in each direction for 2 hours
Shock resistance 500 m/²s, X·Y·Z each direction 3 times
Ambient illumination ▪Sunlight: max. 11000 lx, ▪Incandescent lamp: max. 3000 lx
Ambient temperature During operation : -25 ~ +55 ℃, During storage : -40 ~ +70 ℃  (Without condensation or icing)
Ambient humidity 35 ~ 85 % RH (Without condensation)
Degree of protection IP 65 (IEC standard)
Approval
Material Case
PBT GF30%
Display PC
Lens PC
Accessory Common
Brackets A, Bolt (M3 X 12 mm), Volume driver
individual – Mirror (HY-M5) –
Optional Brackets B, Brackets C, Mirror(HY-M5S)
Weight Approx. 90 g Approx. 60 g Approx. 50 g

(※Note 1) When using HY-M5S 0.1 ~ 4 m
(※Note 2) Red LED flashes in case of overload. (ON Time: 200µm, OFF Time : 40µm)

Ordering Code

Type name Code Contents
PB- □ □ □ □ General Purpose Photo Sensor
Detection method and detection distance T 7 7 m Through-beam
10 10 m
15 15 m
M 3 3 m Retro-reflective (mirror)
R 01 0.1 m Diffuse – reflective
04 0.4 m
1 1 m
D 04 0.4 m Distance settable
Light source – Infrared light LED
R Red light LED (※Note 1)
Output N NPN open collector output
P PNP open collector output

(※Note 1) Red light(R) : T10, M3,  R04  Only

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